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BSC320N20NS3 - 200V MOSFET

Download the BSC320N20NS3 datasheet PDF. This datasheet also covers the BSC320N20NS3G variant, as both devices belong to the same 200v mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

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Features

  • N-channel, normal level.
  • Excellent gate charge x RDS(on) product (FOM).
  • Very low on-resistance RDS(on).
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BSC320N20NS3G-Infineon.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Infineon

Part Number Description
BSC320N20NS3G 200V MOSFET
BSC340N08NS3G Power-Transistor
BSC350N20NSFD 200V MOSFET
BSC360N15NS3G Power-Transistor
BSC004NE2LS5 MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BSC320N20NS3G MOSFET OptiMOSTM3Power-Transistor,200V Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 •Idealforhigh-frequencyswitchingandsynchronousrectification Table1KeyPerformanceParameters Parameter Value Unit VDS 200 V RDS(on),max 32 mΩ ID 36 A PG-TDSON-8 8 7 6 5 5 6 7 8 Pin 1 2 3 4 4 3 2 1 Drain Pin 5-8 Gate *1 Pin 4 Source *1: Internal body diode Pin 1-3 Type/OrderingCode BSC320N20NS3 G Package PG-TDSON-8 Marking 320N20NS RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.
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