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BSC320N20NS3G - 200V MOSFET

Description

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Features

  • N-channel, normal level.
  • Excellent gate charge x RDS(on) product (FOM).
  • Very low on-resistance RDS(on).
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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Full PDF Text Transcription

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BSC320N20NS3G MOSFET OptiMOSTM3Power-Transistor,200V Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 •Idealforhigh-frequencyswitchingandsynchronousrectification Table1KeyPerformanceParameters Parameter Value Unit VDS 200 V RDS(on),max 32 mΩ ID 36 A PG-TDSON-8 8 7 6 5 5 6 7 8 Pin 1 2 3 4 4 3 2 1 Drain Pin 5-8 Gate *1 Pin 4 Source *1: Internal body diode Pin 1-3 Type/OrderingCode BSC320N20NS3 G Package PG-TDSON-8 Marking 320N20NS RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.
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