BSC160N10NS3G Datasheet - Infineon

BSC160N10NS3G Power MOSFET

Type OptiMOSTM3 Power-Transistor Optimized for dc-dc conversion N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 150 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to IEC61249-2-21 BSC160N10NS3 G Product Summary VDS RDS(on),max ID 100 V 16 mW 42 A PG-TDSON-8 Type BSC16.

BSC160N10NS3G Datasheet (408.22 KB)