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BSC118N10NSG Power-Transistor

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Description

BSC118N10NS G OptiMOS™2 Power-Transistor .

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Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary V DS R DS(on),max ID 100 V 11.8 mΩ 71 A
* 150 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified ac

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