BFY450 - HiRel NPN Silicon RF Transistor

Infineon

Datasheet Details

Part number	BFY450
Manufacturer	Infineon
File Size	359.50 KB
Description	HiRel NPN Silicon RF Transistor
Datasheet	BFY450-Infineon.pdf

ESD: Electrostatic discharge sensitive device, observe handling precautions!

4.
For Medium Power Amplifiers.
Compression point P-1dB = 19 dBm at 1.8 GHz Max. available gain Gma = 16dB at 1.8 GHz.
Hermetically sealed microwave package 1.
Transition Frequency fT = 20 GHz.
SIEGET25-Line Infineon Technologies Grounded Emitter Transistor25 GHz fT-Line Product validation.
Space Qualified ESCC Detail Spec. No. : 5611/008 Type Variant No. 03.

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Published: Oct 8, 2024 |