Datasheet Details
- Part number
- AUIRF7478Q
- Manufacturer
- Infineon ↗
- File Size
- 374.74 KB
- Datasheet
- AUIRF7478Q-Infineon.pdf
- Description
- Power MOSFET
AUIRF7478Q Description
AUTOMOTIVE GRADE AUIRF7478Q .
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve.
AUIRF7478Q Features
* Advanced Planar Technology
* Low On-Resistance
* Logic Level Gate Drive
* Dynamic dv/dt Rating
* 150°C Operating Temperature
* Fast Switching
* Repetitive Avalanche Allowed up to Tjmax
* Lead-Free, RoHS Compliant
* Automotive Qualified
* S1
S2 S3 G4
AA 8
AUIRF7478Q Applications
* this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extreme
📁 Related Datasheet
📌 All Tags