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AUIRF7103Q Dual N-Channel MOSFET

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Description

  AUTOMOTIVE GRADE AUIRF7103Q .
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve.

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Features

* Advanced Planar Technology
* Dual N Channel MOSFET
* Low On-Resistance
* Logic Level Gate Drive
* Dynamic dv/dt Rating
* 175°C Operating Temperature
* Fast Switching
* Repetitive Avalanche Allowed up to Tjmax
* Lead-Free, RoHS Compliant
* Automotive Qualifie

Applications

* this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extreme

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