Datasheet Details
- Part number
- AUIRF7103Q
- Manufacturer
- Infineon ↗
- File Size
- 420.70 KB
- Datasheet
- AUIRF7103Q-Infineon.pdf
- Description
- Dual N-Channel MOSFET
AUIRF7103Q Description
AUTOMOTIVE GRADE AUIRF7103Q .
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve.
AUIRF7103Q Features
* Advanced Planar Technology
* Dual N Channel MOSFET
* Low On-Resistance
* Logic Level Gate Drive
* Dynamic dv/dt Rating
* 175°C Operating Temperature
* Fast Switching
* Repetitive Avalanche Allowed up to Tjmax
* Lead-Free, RoHS Compliant
* Automotive Qualifie
AUIRF7103Q Applications
* this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extreme
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