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IDC04S60CE Schottky Diode

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Description

IDC04S60CE 2nd generation thinQ!TM SiC Schottky Diode .
AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Published by Infineon T.

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Features

* Revolutionary semiconductor material Silicon Carbide
* Switching behavior benchmark
* No reverse recovery
* No temperature influence on the switching behavior
* No forward recovery www. DataSheet4U. net
* High surge current capability

Applications

* SMPS, PFC, snubber C A Chip Type IDC04S60CE VBR 600V IF 4A Die Size 1.146 x 0.968 mm2 Package sawn on foil Mechanical Parameter Raster size Anode pad size Area total Thickness Wafer size Max. possible chips per wafer Passivation frontside Anode metal Cathode metal Die bond Wire bond

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