PTF180901F - GSM/EDGE RF Power FET

Infineon Technologies AG

Datasheet Details

and charts stated herein.

s.
Optimized for bandwidths 1805 MHz.
1880 MHz and 1930 MHz.
1990 MHz Improved ruggedness Broadband internal matching Full gold metallization Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 90 W (CW) output power Typical EDGE performance.
Average output power = 35 W.
Gain = 14.5 dB.
Efficiency = 32%.

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PTF180901F Stock/Price