PTF180101 LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz

Infineon Technologies AG

Description

PTF180101 LDMOS RF Power Field Effect Transistor 10 W, 1805 *1880 MHz, 1930 *1990 MHz 10 W, 2110 *2170 MHz .
The PTF180101 is a 10 W, internally. matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band.

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Datasheet Specifications

Part number: PTF180101
Manufacturer: Infineon ↗ Technologies AG
File Size: 310.60 KB
Datasheet: PTF180101_InfineonTechnologiesAG.pdf
Description: LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz

Features

* Typical EDGE performance - Average output power = 4.0 W - Gain = 19.0 dB - Efficiency = 28% - EVM = 1.1 % Typical WCDMA performance - Average output power = 1.8 W - Gain = 18.0 dB - Efficiency = 20% - ACPR =
* 45 dBc Typical CW performance - Output power at P
* 1dB = 15 W - Ef

PTF180101 Distributors

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PTF180101 LDMOS Power Field Effect Transistor 1805-1880 MHz 1930-1990 MHz 2110-2170 MHz Infineon Technologies AG

Infineon Technologies AG PTF180101-like datasheet