BFR949F Datasheet (Infineon Technologies AG)

BFR949F, NPN Silicon RF Transistor

BFR949F NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 9 GHz 3 1 2 F = 1 dB at 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR949F Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS 93°C Junction temperature Ambient temperatur