BFP183R Datasheet (Infineon Technologies AG)

BFP183R, NPN Silicon RF Transistor

BFP183R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP183R Maximum Ratings Parameter Marking RHs 1=E Pin Configuration 2=C 3=E 4=B Package SOT143R Unit V Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 12 20 20 2 65 5 250 150 -65 150 -65 150 Collector-emitter voltage Collector-emitter voltage