BFP181R Datasheet (Infineon Technologies AG)

BFP181R, NPN Silicon RF Transistor

BFP181R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP181R Maximum Ratings Parameter Marking RFs 1=E Pin Configuration 2=C 3=E 4=B Package SOT143R Unit V Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 12 20 20 2 20 2 175 150 -65 150 -65 150 Collector-emitter voltage Collector-emitter volt