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BF999 - Silicon N-Channel MOSFET Triode

BF999 Description

BF999 Silicon N-Channel MOSFET Triode  For high-frequency stages up to 300 MHz 3 preferably in FM applications 2 1 VPS05161 ESD: Electrostatic di.

BF999 Applications

* 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BF999 Maximum Ratings Parameter LBs 1=G 2=D Symbol 3=S Value SOT23 Unit Drain-source voltage Drain current Gate-source peak current Total power dissipation, TS  7

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Silicon N-Channel MOSFET Triode Infineon Technologies AG
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