BF999 Datasheet (Infineon Technologies AG) - Silicon N-Channel MOSFET Triode

BF999, Silicon N-Channel MOSFET Triode

BF999 Silicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz 3 preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BF999 Maximum Ratings Parameter LBs 1=G 2=D Symbol 3=S Value SOT23 Unit Drain-source voltage Drain current Gate-source peak current Total power dissipation, TS 76 °C Storage temperature Channel temperature Thermal Resistance Channel - soldering po