TIP35F Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor TIP35F .
DC Current Gain- : hFE= 25(Min)@IC = 1. Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 160V(Min). Complement to Type TIP36F. C.

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Datasheet Specifications

Part number: TIP35F
Manufacturer: Inchange Semiconductor
File Size: 219.90 KB
Datasheet: TIP35F-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous

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TIP35F Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor TIP35F-like datasheet