TIP35E Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
DC Current Gain- : hFE= 25(Min)@IC = 1. Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 140V(Min). Complement to Type TIP36E. C.

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Datasheet Specifications

Part number: TIP35E
Manufacturer: Inchange Semiconductor
File Size: 219.62 KB
Datasheet: TIP35E-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous

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TIP35E Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor TIP35E-like datasheet