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MJE3055AT - Silicon NPN Power Transistor

The MJE3055AT by Inchange Semiconductor is a Silicon NPN Power Transistor. Below is the official datasheet preview.

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Official preview page of the MJE3055AT Silicon NPN Power Transistor datasheet (Inchange Semiconductor).

Datasheet Details

Part number MJE3055AT
Manufacturer Inchange Semiconductor
File Size 213.97 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet MJE3055AT-InchangeSemiconductor.pdf
Additional preview pages of the MJE3055AT datasheet.

MJE3055AT Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) High DC Current Gain- : hFE= 150-260@IC= 1A Bandwidth Product- : fT = 2MHz(Min)@IC = 500 mA Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emi

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