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MJE341 - NPN Transistor

Description

Collector Emitter Sustaining Voltage- : VCEO(SUS) = 150 V(Min) DC Current Gain- : hFE = 20(Min) @ IC= 150mA 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium voltage and extended

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isc Silicon NPN Power Transistor MJE341 DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 150 V(Min) ·DC Current Gain- : hFE = 20(Min) @ IC= 150mA ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium voltage and extended range amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 175 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 0.5 A IB Base Current-Continuous PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 0.
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