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KTD1510 - Silicon NPN Power Transistors

The KTD1510 by Inchange Semiconductor is a Silicon NPN Power Transistors. Below is the official datasheet preview.

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Official preview page of the KTD1510 Silicon NPN Power Transistors datasheet (Inchange Semiconductor).

Datasheet Details

Part number KTD1510
Manufacturer Inchange Semiconductor
File Size 146.13 KB
Description Silicon NPN Power Transistors
Datasheet download datasheet KTD1510-InchangeSemiconductor.pdf
Additional preview pages of the KTD1510 datasheet.

KTD1510 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 2.5V(Max) @IC= 7A High DC Current Gain : hFE= 5000(Min) @ IC= 7A, VCE= 4V Complement to Type KTB2510 APPLICATIONS High power amplifier applications Recommended for 60W audio amplifier output stage ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base

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