KTA1659A Datasheet - Inchange Semiconductor

KTA1659A, Silicon PNP Power Transistors

isc Silicon PNP Power Transistor DESCRIPTION *High Collector-Emitter Breakdown Voltage VCEO= -180V(Min) *Complement to Type KTC4370A *Min

Applications

* Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5.0 V IC(DC) Collector Current(DC) -1.5 A IB(DC) PC TJ Base Current Coll

KTA1659A-InchangeSemiconductor.pdf