KTA1659 Datasheet - Inchange Semiconductor

KTA1659, Silicon PNP Power Transistors

isc Silicon PNP Power Transistor DESCRIPTION *High Collector-Emitter Breakdown Voltage VCEO= -160V(Min) *Complement to Type KTC4370 *Mini

Applications

* Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5.0 V IC(DC) Collector Current(DC) -1.5 A IB(DC) PC TJ Base Current Coll

KTA1659-InchangeSemiconductor.pdf