KSD986 Silicon NPN Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor KSD986 .
High DC Current Gain- : hFE = 2000(Min)@ IC= 1A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min). Low Collector-Emitter Satu.

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Datasheet Specifications

Part number: KSD986
Manufacturer: Inchange Semiconductor
File Size: 216.45 KB
Datasheet: KSD986-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 150 V 80 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 1.5 A

KSD986 Distributors

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KSD986 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor KSD986-like datasheet