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KSD986 Silicon NPN Power Transistor

KSD986 Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor KSD986 .
High DC Current Gain- : hFE = 2000(Min)@ IC= 1A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min). Low Collector-Emitter Satu.

KSD986 Applications

* Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 150 V 80 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 1.5 A

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Datasheet Details

Part number
KSD986
Manufacturer
Inchange Semiconductor
File Size
216.45 KB
Datasheet
KSD986-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor KSD986-like datasheet