KSD985 Silicon NPN Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification KSD985 .
Collector. Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min. DC Current Gain- : hFE = 2000(Min) @ IC= 1A. Low Collector Saturatio.

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Datasheet Specifications

Part number: KSD985
Manufacturer: Inchange Semiconductor
File Size: 133.24 KB
Datasheet: KSD985-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* They are suitable for use to operate from IC without predriver, such as hammer driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 8V IC Collector Current-Continuous

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KSD985 Silicon NPN Power Transistor Inchange Semiconductor

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