HG2N60 - N-Channel Mosfet Transistor

Inchange Semiconductor

HG2N60 Description

INCHANGE Semiconductor isc N-Channel Mosfet Transistor *.

HG2N60 Features

* Drain Current
* ID= 2A@ TC=25℃
* Drain Source Voltage- : VDSS= 600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 4.5Ω(Max)
* Avalanche Energy Specified
* Fast Switching
* Simple Drive Requirements
* DESCRITION
* High efficiency switch mode power supply. Char

📥 Download Datasheet

HG2N60 Datasheet Preview — Preview of HG2N60 PDF

Datasheet Details

Part number: HG2N60
Manufacturer: Inchange Semiconductor
File Size: 132.03 KB
Datasheet: HG2N60-InchangeSemiconductor.pdf
Description: N-Channel Mosfet Transistor

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N-Channel Mosfet Transistor Inchange Semiconductor

Inchange Semiconductor HG2N60-like datasheet