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D1716 2SD1716

D1716 Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1716 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min. Good Linearity of hFE. Wide Area of Safe Operation. Complement to Type 2.

D1716 Applications

* Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 12 A ICP Collector Current-Pulse Coll

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2SD1716 Inchange Semiconductor
Inchange Semiconductor D1716-like datasheet