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D1576 Silicon NPN Power Transistor

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Description

www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1576 .
High Collector-Base Breakdown Voltage: V(BR)CBO= 1500V (Min. High Switching Speed. Wide Area of Safe Operation APPLICATIONS. Desig.

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Datasheet Specifications

Part number
D1576
Manufacturer
Inchange Semiconductor
File Size
234.33 KB
Datasheet
D1576-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

Applications

* Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector- Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current- Continuous w ww s c s . i

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