D1517 Silicon NPN Power Transistor

Inchange Semiconductor

Description

www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1517 .
Low Collector Saturation Voltage : VCE(sat)= 0. Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V (Min). Good Linearity.

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Datasheet Specifications

Part number: D1517
Manufacturer: Inchange Semiconductor
File Size: 242.80 KB
Datasheet: D1517-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for power amplifier,power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w s c s i . w VALUE UNIT 130 V 80 V 7 V 2 A 5 A 25 W n c . i m e IC Collector Current-C

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D1517 Silicon NPN Power Transistor Inchange Semiconductor

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