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C3514 2SC3514

C3514 Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3514 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min). Good Linearity of hFE. Complement to Type 2SA1383 APPLICATIONS. Adu.

C3514 Applications

* Adudio frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 0.1 A Collector Power Dissipation@ Ta=25℃ 1.5

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2SC3514 Inchange Semiconductor
Inchange Semiconductor C3514-like datasheet