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BD956 - Silicon PNP Power Transistor

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Datasheet Details

Part number BD956
Manufacturer Inchange Semiconductor
File Size 213.62 KB
Description Silicon PNP Power Transistor
Datasheet download datasheet BD956-InchangeSemiconductor.pdf

BD956 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) DC Current Gain- : hFE= 40(Min)@ IC= -500mA Complement to Type BD955 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collect

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