Datasheet Details
| Part number | BD950 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.08 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet |
|
| Part number | BD950 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.08 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet |
|
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) DC Current Gain- : hFE= 40(Min)@ IC= -500mA Complement to Type BD949 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector
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