Datasheet Details
| Part number | 4N35 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 226.14 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet |
 4N35 Datasheet
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| Part number | 4N35 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 226.14 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet |
4N35 Datasheet
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Drain Current ID= 4A@ TC=25℃ Drain Source Voltage- : VDSS= 350V(Min) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 350 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 4 A ID(puls) Pulse Drain Current 16 A Ptot Total Dissipation@TC=25℃
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