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3DD208 - Silicon NPN Power Transistor

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Datasheet Details

Part number 3DD208
Manufacturer Inchange Semiconductor
File Size 202.44 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet 3DD208-InchangeSemiconductor.pdf

3DD208 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) DC Current Gain- : hFE= 30~250(Min.)@IC= 0.5A Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 1A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage

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