3DD102 Datasheet - Inchange Semiconductor

3DD102-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

3DD102

Manufacturer:

Inchange Semiconductor

File Size:

151.04 KB

Description:

Silicon npn power transistor.

3DD102, Silicon NPN Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) *DC Current Gain- : hFE= 20(Min.)@IC= 2A *Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 2.5A APPLICATIONS *Designed for power amplifier , DC Transform T-Shirt * SYMBOL PARAMETER VALUE UNIT VCBO

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3DD102 Silicon NPN Power Transistor Inchange Semiconductor

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