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3DD102C - Silicon NPN Power Transistor

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Datasheet Details

Part number 3DD102C
Manufacturer Inchange Semiconductor
File Size 209.37 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet 3DD102C-InchangeSemiconductor.pdf

3DD102C Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) DC Current Gain- : hFE= 20(Min.)@IC= 2A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 2.5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier , DC Transform T-Shirt SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 4 V IC

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