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2SC5265 - Silicon NPN Power Transistor

Description

High Breakdown Voltage-(Vcb=1200V) High Reliability Adoption of MBIT process Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Inverter-controlled Lighting ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT

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isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage-(Vcb=1200V) · High Reliability ·Adoption of MBIT process ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Inverter-controlled ·Lighting ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 9 V IC Collector Current- Continuous 4 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC5265 isc website：www.iscsemi.
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