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2SC3627 - Silicon NPN Power Transistors

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Datasheet Details

Part number 2SC3627
Manufacturer Inchange Semiconductor
File Size 196.42 KB
Description Silicon NPN Power Transistors
Datasheet download datasheet 2SC3627_InchangeSemiconductor.pdf

2SC3627 Product details

Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Collector

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