2SC3622 Datasheet (NEC) - NPN SILICON EPITAXIAL TRANSISTOR

2SC3622, NPN SILICON EPITAXIAL TRANSISTOR

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full r

2SC3622 Features

* www.DataSheet4U.com PACKAGE DRAWING (UNIT: mm)

* High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA

* Low VCE(sat):

* High VEBO: VEBO: 12 V (2SC3622) VEBO: 15 V (2SC3622A) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Coll