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2SC3583 - Silicon NPN RF Transistor

The 2SC3583 by Inchange Semiconductor is a Silicon NPN RF Transistor. Below is the official datasheet preview.

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Official preview page of the 2SC3583 Silicon NPN RF Transistor datasheet (Inchange Semiconductor).

Datasheet Details

Part number 2SC3583
Manufacturer Inchange Semiconductor
File Size 406.82 KB
Description Silicon NPN RF Transistor
Datasheet download datasheet 2SC3583-InchangeSemiconductor.pdf
Additional preview pages of the 2SC3583 datasheet.

2SC3583 Product details

Description

Low Noise and High Gain NF = 1.2 dB TYP., Ga = 11 dB TYP.@VCE = 8 V, IC = 7 mA, f = 1.0 GHz High Power Gain MAG = 15dB TYP. Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low noise amplifier at VHF, UHF and CATV band.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Vol

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