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2SC3587 - NPN EPITAXIAL SILICON TRANSISTOR

Features

  • Low noise : NF = 1.7 dB TYP. @ f = 2 GHz C 3.8 MIN. 3.8 MIN. B NF = 2.6 dB TYP. @ f = 4 GHz.
  • High power gain : GA = 12.5 dB TYP. @ f = 2 GHz GA = 8.0 dB TYP. @ f = 4 GHz 3.8 MIN. 45 °.

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Datasheet Details

Part number 2SC3587
Manufacturer NEC
File Size 91.02 KB
Description NPN EPITAXIAL SILICON TRANSISTOR
Datasheet download datasheet 2SC3587 Datasheet

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Full PDF Text Transcription

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DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range. PACKAGE DIMENSIONS (in mm) E 3.8 MIN. FEATURES • Low noise : NF = 1.7 dB TYP. @ f = 2 GHz C 3.8 MIN. 3.8 MIN. B NF = 2.6 dB TYP. @ f = 4 GHz • High power gain : GA = 12.5 dB TYP. @ f = 2 GHz GA = 8.0 dB TYP. @ f = 4 GHz 3.8 MIN.
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