Datasheet Details
| Part number | 2SC3356 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 399.63 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
 2SC3356_InchangeSemiconductor.pdf
|
| Part number | 2SC3356 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 399.63 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
2SC3356_InchangeSemiconductor.pdf
|
Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP.@VCE = 10 V, IC = 7 mA, f = 1.0 GHz High Power Gain MAG = 13 dB TYP. Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low noise amplifier at VHF, UHF and CATV band.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base
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