2SB966 - Silicon PNP Power Transistors

Inchange Semiconductor

The 2SB966 by Inchange Semiconductor is a Silicon PNP Power Transistors. Below is the official datasheet preview.

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2SB966 Silicon PNP Power Transistors by Inchange Semiconductor - Datasheet Preview — Official preview page of the **2SB966** Silicon PNP Power Transistors datasheet (Inchange Semiconductor).

Datasheet Details

Part number	2SB966
Manufacturer	Inchange Semiconductor
File Size	205.34 KB
Description	Silicon PNP Power Transistors
Datasheet	2SB966_InchangeSemiconductor.pdf
Additional preview pages of the 2SB966 datasheet.

2SB966 Product details

Description

Low Collector Saturation Voltage : VCE(sat)= -0.65V(Typ)@IC= -5.0A Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) Complement to Type 2SD1289 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO E

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Published: Oct 25, 2013 |