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2SB967 - PNP Transistor

Features

  • Unit nA µA V V.
  • 18.
  • 7 90 625.
  • 1 120 85 VCE(sat) V MHz pF FE Rank classification P 90 to 135 Q 125 to 205 R 180 to 625 Rank hFE 1 Power Transistors PC.
  • Ta 32.
  • 6 TC=Ta 28.
  • 5 IB=.
  • 40mA.
  • 35mA.
  • 30mA.
  • 25mA.
  • 4.
  • 20mA.
  • 15mA.
  • 10mA.
  • 2.
  • 5mA.
  • 1 4 0 0 20 40 60 80 100 120 140 160 0 0.
  • 2.
  • 4.
  • 6.
  • 8.
  • 10.
  • 12.
  • 1mA 0 0.

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Power Transistors 2SB967 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification 7.3± 0.1 1.8± 0.1 6.5± 0.1 5.3± 0.1 4.35± 0.1 2.3± 0.1 0.5± 0.1 2.5± 0.1 0.8max q q q Possible to solder the radiation fin directly to printed cicuit board Low collector to emitter saturation voltage VCE(sat) Large collector current IC 0.93±0.1 1.0± 0.1 0.1± 0.05 0.5± 0.1 0.75± 0.1 2.3± 0.1 4.6± 0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (TC=25°C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1 2 3 (Ta=25˚C) Ratings –27 –18 –7 –8 –5 20 150 –55 to +150 Unit V V V A A W 0.6 2.3 2.3 0.75 6.5±0.
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