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2SB649 - Silicon PNP Power Transistor

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Datasheet Details

Part number 2SB649
Manufacturer Inchange Semiconductor
File Size 212.49 KB
Description Silicon PNP Power Transistor
Datasheet download datasheet 2SB649_InchangeSemiconductor.pdf

2SB649 Product details

Description

High Collector Current-IC=-1.5A High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-120V(Min) Good Linearity of hFE Low Saturation Voltage Complement to Type 2SD669 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Volta

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