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2SB1562 - Silicon PNP Power Transistor

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Datasheet Details

Part number 2SB1562
Manufacturer Inchange Semiconductor
File Size 191.94 KB
Description Silicon PNP Power Transistor
Datasheet download datasheet 2SB1562_InchangeSemiconductor.pdf

2SB1562 Product details

Description

High DC Current Gain- : hFE= 300~1000@ (VCE= -5V , IC= -0.5A) Low Saturation Voltage- : VCE(sat)= -0.5V(TYP)@ (IC= -2A, IB= -20mA) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continu

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