2SA1535A - POWER TRANSISTOR

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) -2SA1535 = -180V(Min) -2SA1535A Good Linearity of hFE Complement to Type 2SC3944/A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency driver a

Inchange Semiconductor

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Datasheet Details

Part number	2SA1535A
Manufacturer	Inchange Semiconductor
File Size	218.53 KB
Description	POWER TRANSISTOR
Datasheet	2SA1535A Datasheet

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isc Silicon PNP Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) -2SA1535 = -180V(Min) -2SA1535A ·Good Linearity of hFE ·Complement to Type 2SC3944/A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency driver and high power amplifi- cation, is optimum for the driver-stage of a 60W to 100 W output amplifier.

Published: Jul 4, 2011 |