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2SA1567 - POWER TRANSISTOR

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) DC Current Gain- : hFE= 50(Min)@ (VCE= -1V,IC= -6A) Low Saturation Voltage- : VCE(sat)= -0.35V(Max)@ (IC= -6A, IB -0.6A) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 50(Min)@ (VCE= -1V,IC= -6A) ·Low Saturation Voltage- : VCE(sat)= -0.35V(Max)@ (IC= -6A, IB -0.6A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for DC motor driver, chopper regulator and general purpose applications.