2SA1279 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA1279 .
Collector-Emitter Breakdown Voltage : V(BR)CEO= -60V(Min). Good Linearity of hFE. Minimum Lot-to-Lot variations for robust device perform.

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Datasheet Specifications

Part number: 2SA1279
Manufacturer: Inchange Semiconductor
File Size: 174.53 KB
Datasheet: 2SA1279_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A Icm Emitter Current-pulse

2SA1279 Distributors

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2SA1279 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1279-like datasheet