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2SA1215 - POWER TRANSISTOR

Description

Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min) High Power Dissipation Complement to Type 2SC2921 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T

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isc Silicon PNP Power Transistor 2SA1215 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min) ·High Power Dissipation ·Complement to Type 2SC2921 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -4 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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