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2SA1276 POWER TRANSISTOR

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Description

isc Silicon PNP Power Transistor 2SA1276 .
Collector-Emitter Breakdown Voltage : V(BR)CEO= -30V(Min). Good Linearity of hFE. Complement to Type 2SC3230. Minimum Lot-to-Lot vari.

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Datasheet Specifications

Part number
2SA1276
Manufacturer
Inchange Semiconductor
File Size
219.79 KB
Datasheet
2SA1276_InchangeSemiconductor.pdf
Description
POWER TRANSISTOR

Applications

* Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A IE Emitter Current-Continuous

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