2SA1250 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA1250 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min). Low Collector Saturatioin Voltage- : VCE(sat)= -1. Minimum.

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Datasheet Specifications

Part number: 2SA1250
Manufacturer: Inchange Semiconductor
File Size: 212.28 KB
Datasheet: 2SA1250_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for general-purpose power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A IB Base Cur

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2SA1250 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1250-like datasheet